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BFU730LX - NPN wideband silicon germanium RF transistor

Description

NPN silicon germanium microwave transistor for high speed, low noise applications in a SOT883C leadless ultra small plastic SMD package.

This device is sensitive to ElectroStatic Discharge (ESD).

Observe precautions for handling electrostatic sensitive devices.

Features

  • Leadless ultra small plastic SMD package 1.0 mm  0.6 mm  0.34 mm.
  • Low noise high gain microwave transistor.
  • Noise figure (NF) = 0.75 dB at 6 GHz.
  • High maximum power gain (Gp(max)) of 15.8 dB at 6 GHz.
  • Excellent linearity in WiFi LNA from 5 GHz to 5.9 GHz:.
  • input third-order intercept point (IP3i) = 15 dBm.
  • input power at 1 dB gain compression (Pi(1dB)) = 0 dBm See.

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Full PDF Text Transcription

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627& BFU730LX NPN wideband silicon germanium RF transistor Rev. 1 — 8 May 2013 Product data sheet 1. Product profile CAUTION 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a SOT883C leadless ultra small plastic SMD package. This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic sensitive devices. Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or equivalent standards. 1.2 Features and benefits  Leadless ultra small plastic SMD package 1.0 mm  0.6 mm  0.34 mm  Low noise high gain microwave transistor  Noise figure (NF) = 0.75 dB at 6 GHz  High maximum power gain (Gp(max)) of 15.
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