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BFU510 - NPN SiGe wideband transistor

Description

DESCRIPTION NPN SiGe wideband transistor for low voltage applications in a plastic, 4-pin dual-emitter SOT343R package.

Features

  • Very high power gain.
  • Very low noise figure.
  • High transition frequency.
  • Emitter is thermal lead.
  • Low feedback capacitance.
  • 45 GHz SiGe process.

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Full PDF Text Transcription

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DISCRETE SEMICONDUCTORS DATA SHEET M3D124 BFU510 NPN SiGe wideband transistor Product specification Supersedes data of 2001 Nov 08 2003 Jun 12 Philips Semiconductors Product specification NPN SiGe wideband transistor FEATURES • Very high power gain • Very low noise figure • High transition frequency • Emitter is thermal lead • Low feedback capacitance • 45 GHz SiGe process. APPLICATIONS • RF front end • Wideband applications, e.g. analog and digital cellular telephones, cordless telephones (PHS, DECT, etc.) • Radar detectors • Pagers • Satellite television tuners (SATV) • High frequency oscillators. Marking code: A5.
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