BFU725F-N1 transistor equivalent, npn wideband silicon germanium rf transistor.
* Low noise high gain microwave transistor
* Noise figure (NF) = 0.7 dB at 5.8 GHz
* High maximum stable gain 27 dB at 1.8 GHz
* 110 GHz fT silicon german.
in a plastic, 4-pin dual-emitter SOT343F package.
This device is sensitive to ElectroStatic Discharge (ESD). Observe pr.
NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic sensitive d.
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