BFU730LX transistor equivalent, npn wideband silicon germanium rf transistor.
* Leadless ultra small plastic SMD package 1.0 mm 0.6 mm 0.34 mm
* Low noise high gain microwave transistor
* Noise figure (NF) = 0.75 dB at 6 GHz
* H.
in a SOT883C leadless ultra small plastic SMD package.
This device is sensitive to ElectroStatic Discharge (ESD). Observ.
NPN silicon germanium microwave transistor for high speed, low noise applications in a SOT883C leadless ultra small plastic SMD package.
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic sensiti.
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