PMZ600UNE datasheet, mosfet equivalent, NXP

Features and benefits

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* Trench MOSFET technology Leadless ultra small SMD plastic package: 1.0 × 0.6 × 0.48 mm ElectroStatic Discharge (ESD) protection > 1 kV HBM Drain-s.

Application

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* Relay driver High-speed line driver Low-side load switch Switching circuits 4. Quick reference .

Description

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits
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* Trench MOSFET technol.

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