PMZ130UNE mosfet equivalent, n-channel trench mosfet.
* Very fast switching
* Low threshold voltage
* Trench MOSFET technology
* ElectroStatic Discharge (ESD) protection: 2 kV HBM
* Leadless ultra small p.
* Relay driver
* High-speed line driver
* Low-side loadswitch
* Switching circuits
4. Quick reference d.
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2. Features and benefits
* Very fast switching
* Low threshold.
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