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PMZ1200UPE Datasheet Preview

PMZ1200UPE Datasheet

P-channel MOSFET

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PMZ1200UPE
30 V, P-channel Trench MOSFET
25 March 2015
Product data sheet
1. General description
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small
DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
2. Features and benefits
Trench MOSFET technology
Low threshold voltage
Very fast switching
ElectroStatic Discharge (ESD) protection > 2 kV HBM
Leadless ultra small SMD package: 1.0 x 0.6 x 0.48 mm
3. Applications
Relay driver
High-speed line driver
High-side loadswitch
Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source voltage
VGS gate-source voltage
ID drain current
Static characteristics
RDSon
drain-source on-state
resistance
Conditions
Tj = 25 °C
VGS = -4.5 V; Tamb = 25 °C
VGS = -4.5 V; ID = -410 mA; Tj = 25 °C
[1]
Min Typ Max Unit
- - -30 V
-8 -
8V
- - -410 mA
- 1.2 1.4 Ω
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 1 cm2.




nexperia

PMZ1200UPE Datasheet Preview

PMZ1200UPE Datasheet

P-channel MOSFET

No Preview Available !

Nexperia
PMZ1200UPE
30 V, P-channel Trench MOSFET
5. Pinning information
Table 2. Pinning information
Pin Symbol Description
1 G gate
2 S source
3 D drain
Simplified outline
1
3
2
Transparent
top view
DFN1006-3 (SOT883)
Graphic symbol
G
D
S
017aaa259
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
PMZ1200UPE
DFN1006-3
Description
Version
DFN1006-3: leadless ultra small plastic package; 3 solder lands SOT883
7. Marking
Table 4. Marking codes
Type number
PMZ1200UPE
Marking code
ZL
PMZ1200UPE
Product data sheet
All information provided in this document is subject to legal disclaimers.
25 March 2015
© Nexperia B.V. 2017. All rights reserved
2 / 15


Part Number PMZ1200UPE
Description P-channel MOSFET
Maker nexperia
Total Page 15 Pages
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