PMZ1200UPE
PMZ1200UPE is P-channel MOSFET manufactured by Nexperia.
30 V, P-channel Trench MOSFET
25 March 2015
Product data sheet
1. General description
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2. Features and benefits
- Trench MOSFET technology
- Low threshold voltage
- Very fast switching
- Electro Static Discharge (ESD) protection > 2 k V HBM
- Leadless ultra small SMD package: 1.0 x 0.6 x 0.48 mm
3. Applications
- Relay driver
- High-speed line driver
- High-side loadswitch
- Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source voltage
VGS gate-source voltage
ID drain current
Static characteristics
RDSon drain-source on-state resistance
Conditions Tj = 25 °C
VGS = -4.5 V; Tamb = 25 °C
VGS = -4.5 V; ID = -410 m A; Tj = 25 °C
[1]
Min Typ Max...
