PMZ1200UPE datasheet, mosfet equivalent, nexperia

Features and benefits

* Trench MOSFET technology
* Low threshold voltage
* Very fast switching
* ElectroStatic Discharge (ESD) protection > 2 kV HBM
* Leadless ultra small .

Application

* Relay driver
* High-speed line driver
* High-side loadswitch
* Switching circuits 4. Quick reference .

Description

P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits
* Trench MOSFET technology
* Low thre.

Image gallery