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MRF9060LSR1, MRF9060LR1 Datasheet - NXP

MRF9060LSR1 RF Power Field Effect Transistors

Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large - signal, common - source amplifier applications in 26 volt base station equipment. Typical Two - Tone Performance at 945 MHz, 26 Volts Output Power 60 Watts PEP Power Gain .

MRF9060LSR1 Features

* Integrated ESD Protection

* Designed for Maximum Gain and Insertion Phase Flatness

* Excellent Thermal Stability

* Characterized with Series Equivalent Large - Signal Impedance Parameters

* Low Gold Plating Thickness on Leads. L Suffix Indicates 40μ″ Nominal

MRF9060LR1-NXP.pdf

This datasheet PDF includes multiple part numbers: MRF9060LSR1, MRF9060LR1. Please refer to the document for exact specifications by model.
MRF9060LSR1 Datasheet Preview Page 2 MRF9060LSR1 Datasheet Preview Page 3

Datasheet Details

Part number:

MRF9060LSR1, MRF9060LR1

Manufacturer:

NXP ↗

File Size:

402.19 KB

Description:

Rf power field effect transistors.

Note:

This datasheet PDF includes multiple part numbers: MRF9060LSR1, MRF9060LR1.
Please refer to the document for exact specifications by model.

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TAGS

MRF9060LSR1 MRF9060LR1 Power Field Effect Transistors NXP

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