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MRF9060NR1 Datasheet RF Power Field Effect Transistors

Manufacturer: Freescale Semiconductor (now NXP Semiconductors)

Overview: Freescale Semiconductor Technical Data Document Number: MRF9060N Rev. 10, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, common-source amplifier applications in 26 volt base station equipment. • Typical Performance at 945 MHz, 26 Volts Output Power — 60 Watts PEP Power Gain — 18.0 dB Efficiency — 40% (Two Tones) IMD — - 31.5 dBc • Capable of Handling 5:1 VSWR, @ 26 Vdc, 945 MHz, 60 Watts CW Output Power www.DataSheet4U.

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Key Features

  • Excellent Thermal Stability.
  • Characterized with Series Equivalent Large - Signal Impedance Parameters.
  • Integrated ESD Protection.
  • 200_C Capable Plastic Package.
  • N Suffix Indicates Lead - Free Terminations. RoHS Compliant.
  • TO - 270 - 2 Available in Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel.
  • TO - 272 - 2 Available in Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. MRF9060NR1 MRF9060NBR1 945 MHz, 60.

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