MRF9060NR1
MRF9060NR1 is RF Power Field Effect Transistors manufactured by Freescale Semiconductor.
Freescale Semiconductor Technical Data
Document Number: MRF9060N Rev. 10, 5/2006
RF Power Field Effect Transistors
- Channel Enhancement
- Mode Lateral MOSFETs
Designed for broadband mercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, mon-source amplifier applications in 26 volt base station equipment.
- Typical Performance at 945 MHz, 26 Volts Output Power
- 60 Watts PEP Power Gain
- 18.0 dB Efficiency
- 40% (Two Tones) IMD
- - 31.5 dBc
- Capable of Handling 5:1 VSWR, @ 26 Vdc, 945 MHz, 60 Watts CW Output Power .. Features
- Excellent Thermal Stability
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