• Part: MRF9060NR1
  • Description: RF Power Field Effect Transistors
  • Manufacturer: Freescale Semiconductor
  • Size: 544.41 KB
Download MRF9060NR1 Datasheet PDF
Freescale Semiconductor
MRF9060NR1
MRF9060NR1 is RF Power Field Effect Transistors manufactured by Freescale Semiconductor.
Freescale Semiconductor Technical Data Document Number: MRF9060N Rev. 10, 5/2006 RF Power Field Effect Transistors - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband mercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, mon-source amplifier applications in 26 volt base station equipment. - Typical Performance at 945 MHz, 26 Volts Output Power - 60 Watts PEP Power Gain - 18.0 dB Efficiency - 40% (Two Tones) IMD - - 31.5 dBc - Capable of Handling 5:1 VSWR, @ 26 Vdc, 945 MHz, 60 Watts CW Output Power .. Features - Excellent Thermal Stability -...