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MRF9060LR1 - RF Power Field Effect Transistors

NXP

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Datasheet Details

Part number	MRF9060LR1
Manufacturer	NXP
File Size	402.19 KB
Description	RF Power Field Effect Transistors
Datasheet	MRF9060LR1-NXP.pdf

MRF9060LR1 Product details

Features

Integrated ESD Protection.
Designed for Maximum Gain and Insertion Phase Flatness.
Excellent Thermal Stability.
Characterized with Series Equivalent Large - Signal Impedance Parameters.
Low Gold Plating Thickness on Leads. L Suffix Indicates 40μ″ Nominal.
RoHS Compliant.
In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel. Document Number: MRF9060 Rev. 9, 5/2006 MRF9060LR1 MRF9060LSR1 945 MHz, 60 W, 26 V.

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Published: Oct 6, 2024 |