MRF9060LR1 Datasheet (NXP) - RF Power Field Effect Transistors

MRF9060LR1, RF Power Field Effect Transistors

Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz.

The high gain and broadband performance of these devices make them ideal for large - signal, common - source amplifier applications in 26 volt base station equipment.

Typical Two - Tone Performance at 945 MHz, 26 Volts Output Power 60 Watts PEP Power Gain

MRF9060LR1 Features

* Integrated ESD Protection

* Designed for Maximum Gain and Insertion Phase Flatness

* Excellent Thermal Stability

* Characterized with Series Equivalent Large - Signal Impedance Parameters

* Low Gold Plating Thickness on Leads. L Suffix Indicates 40μ″ Nominal