MRF9120LR3 Datasheet - NXP

MRF9120LR3 RF Power MOSFET

ARCHIVE INFORMATION ARCHIVE INFORMATION Freescale Semiconductor Technical Data RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance of this device makes it ideal for large-signal, common source amplifier applications in 26 volt base station equipment. Typical CDMA Performance @ 880 MHz, 26 Volts, IDQ = 1000 mA IS-95 CDMA (Pi.

MRF9120LR3 Features

* Characterized with Series Equivalent Large-Signal Impedance Parameters

* Integrated ESD Protection

* Designed for Maximum Gain and Insertion Phase Flatness

* Excellent Thermal Stability

* Available with Low Gold Plating Thickness on Leads. L Suffix Indicates

MRF9120LR3 Datasheet (357.44 KB)