Datasheet4U Logo Datasheet4U.com

MRF9060MR1 - RF Power Field Effect Transistors

General Description

Value, P/N or DWG 95F786 95F787 100B470JP 500X 44F3360 100B110JP 500X 100B100JP 500X 93F2975 100B100JP 500X 100B3R9CP 500X 100B1R7BP 500X 14F185 A04T 5 3052 1648 10 Manufacturer Newark Newark ATC Newark ATC Newark Newark ATC ATC Newark Coilcraft Avnet MRF9060MR1 MRF9060MBR1

Key Features

  • H. 2.

📥 Download Datasheet

More Datasheets from Motorola Semiconductor (now NXP Semiconductors)

Part Number Description
MRF9060MBR1 RF Power Field Effect Transistors
MRF9060 RF Power Field Effect Transistors
MRF9060R1 N-CHANNEL BROADBAND RF POWER MOSFETs
MRF9060S RF Power Field Effect Transistors
MRF9060SR1 N-CHANNEL BROADBAND RF POWER MOSFETs
MRF901 NPN Silicon High-Frequency Transistor
MRF9011 NPN Silicon High-Frequency Transistor
MRF9011L NPN Silicon High-Frequency Transistor
MRF9011LT1 NPN Silicon High-Frequency Transistor
MRF9030LR1 RF Power Field Effect Transistors

Full PDF Text Transcription for MRF9060MR1 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for MRF9060MR1. For precise diagrams, tables, and layout, please refer to the original PDF.

View original datasheet text
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF9060M/D The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices make them ideal for large–signal, common–source amplifier applications in 26 volt base station equipment. • Typical Performance at 945 MHz, 26 Volts Output Power — 60 Watts PEP Power Gain — 18.0 dB Efficiency — 40% (Two Tones) IMD — –31.5 dBc www.DataSheet4U.