Datasheet4U Logo Datasheet4U.com

MRF9060LR1 - RF Power Field Effect Transistors

General Description

95F786 95F787 100B470JP 500X 44F3360 100B100JP 500X 93F2975 100B3R0JP 500X 100B0R5BP 500X 100B0R7BP 500X 14F185 A04T 5 3052 1648 10 Part Number Manufacturer Newark Newark ATC Newark ATC Newark ATC ATC ATC Newark Coilcraft Avnet MRF9060LR1 MRF9060LSR1 5 4 RF Device Da

Key Features

  • 26 V, IDQ = 450 mA, Pout = 60 W PEP f MHz 930 945 960 Zsource Ω 0.80.
  • j0.10 0.80.
  • j0.05 0.81.
  • j0.10 Zload Ω 2.08.
  • j0.65 2.07.
  • j0.38 2.04.
  • j0.37 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Device Under Test Output Matching Network Input Matching Network Z source Z load Figure 9. Series Equivalent Source and Load Impedance MRF9060LR1 MRF9060LSR1 5.

📥 Download Datasheet

📁 Similar Datasheet

Brand Logo Part Number Description Manufacturer
NXP Logo MRF9060LR1 RF Power Field Effect Transistors NXP

More Datasheets from Freescale Semiconductor (now NXP Semiconductors)

Part Number Description
MRF9060LSR1 RF Power Field Effect Transistors
MRF9060NBR1 RF Power Field Effect Transistors
MRF9060NR1 RF Power Field Effect Transistors
MRF9002NR2 RF Power FET
MRF9030LR1 RF Power Field Effect Transistor
MRF9030MBR1 RF Power Field Effect Transistors
MRF9030MBR1 RF POWER FIELD EFFECT TRANSISTORS
MRF9030MR1 RF Power Field Effect Transistors
MRF9030MR1 RF POWER FIELD EFFECT TRANSISTORS
MRF9030NBR1 RF Power Field Effect Transistors

Full PDF Text Transcription for MRF9060LR1 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for MRF9060LR1. For precise diagrams, tables, and layout, please refer to the original PDF.

View original datasheet text
Freescale Semiconductor Technical Data MRF9060 Rev. 8, 12/2004 RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large−signal, common−source amplifier applications in 26 volt base station equipment. • Typical Two−Tone Performance at 945 MHz, 26 Volts Output Power — 60 Watts PEP Power Gain — 17 dB Efficiency — 40% IMD — −31 dBc www.DataSheet4U.