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MRF9060NBR1 - RF Power Field Effect Transistors

Download the MRF9060NBR1 datasheet PDF. This datasheet also covers the MRF9060NR1 variant, as both devices belong to the same rf power field effect transistors family and are provided as variant models within a single manufacturer datasheet.

General Description

95F786 95F787 100B470JP 500X 44F3360 100B110JP 500X 100B100JP 500X 93F2975 100B100JP 500X 100B3R9CP 500X 100B1R7BP 500X 14F185 A04T- 5 3052- 1648- 10 Part Number Manufacturer Newark Newark ATC Newark ATC Newark Newark ATC ATC Newark Coilcraft Avnet MRF9060NR1 MRF9060NBR1 4 RF Device Data Freescale

Key Features

  • Excellent Thermal Stability.
  • Characterized with Series Equivalent Large - Signal Impedance Parameters.
  • Integrated ESD Protection.
  • 200_C Capable Plastic Package.
  • N Suffix Indicates Lead - Free Terminations. RoHS Compliant.
  • TO - 270 - 2 Available in Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel.
  • TO - 272 - 2 Available in Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. MRF9060NR1 MRF9060NBR1 945 MHz, 60.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MRF9060NR1_FreescaleSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
MRF9060 RF Power Field Effect Transistors Motorola
MRF9060LR1 RF Power Field Effect Transistors NXP
MRF9060LSR1 RF Power Field Effect Transistors NXP
MRF9060MBR1 RF Power Field Effect Transistors Motorola
MRF9060MR1 RF Power Field Effect Transistors Motorola

Other Datasheets by Freescale Semiconductor (now NXP Semiconductors)

Part Number Description
MRF9060NR1 RF Power Field Effect Transistors
MRF9060LR1 RF Power Field Effect Transistors
MRF9060LSR1 RF Power Field Effect Transistors
MRF9002NR2 RF Power FET
MRF9030LR1 RF Power Field Effect Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Freescale Semiconductor Technical Data Document Number: MRF9060N Rev. 10, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, common-source amplifier applications in 26 volt base station equipment. • Typical Performance at 945 MHz, 26 Volts Output Power — 60 Watts PEP Power Gain — 18.0 dB Efficiency — 40% (Two Tones) IMD — - 31.5 dBc • Capable of Handling 5:1 VSWR, @ 26 Vdc, 945 MHz, 60 Watts CW Output Power www.DataSheet4U.