BLF578XR transistor equivalent, power ldmos transistor.
* Typical pulsed performance at frequency of 225 MHz, a supply voltage of 50 V and an IDq of 40 mA, a tp of 100 s with of 20 %:
* Output power = 1400 W
* P.
in the HF to 500 MHz band. This product is an enhanced version of the BLF578 using NXP's XR process to provide maximum r.
A 1400 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 500 MHz band. This product is an enhanced version of the BLF578 using NXP's XR process to provide maximum ruggedness capability in the most severe.
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