BLF578 transistor equivalent, power ldmos transistor.
I Typical pulsed performance at frequency of 225 MHz, a supply voltage of 50 V and an IDq of 40 mA, a tp of 100 µs with δ of 20 %: N Output power = 1200 W N Power gain = .
and industrial applications in the HF to 500 MHz band.
Table 1. Production test information f (MHz) pulsed RF 225 VDS (V.
A 1200 W LDMOS power transistor for broadcast applications and industrial applications in the HF to 500 MHz band.
Table 1. Production test information f (MHz) pulsed RF 225 VDS (V) 50 PL (W) 1200 Gp (dB) 24 ηD (%) 70
Mode of operation
CAUTION This .
Image gallery
TAGS
Download