BLA6H1011-600 Datasheet, NXP

* Typical pulsed RF performance at a frequency of 1030 MHz to 1090 MHz, a supply voltage of 48 V, an IDq of 100 mA, a tp of 50 μs with δ of 2 %: ‹ Output power = 600 .

in the 1030 MHz to 1090 MHz range. Table 1. Test information Typical RF performance at Tcase = 25 °C; tp = 50 μs; δ = 2 .

600 W LDMOS pulsed power transistor intended for TCAS and IFF applications in the 1030 MHz to 1090 MHz range. Table 1. Test information Typical RF performance at Tcase = 25 °C; tp = 50 μs; δ = 2 %; IDq = 100 mA; in a class-AB production test circuit..

BLA6H0912-500

BLA6H0912L-1000

BLA6H0912LS-1000

BLA6G1011-200R

BLA6G1011L-200RG

BLA6G1011LS-200RG

BLA0912-250

BLA0912-250R

BLA10

BLA1011-10

BLA1011-2

BLA1011-200

BLA1011-300