Datasheet Details
| Part number | BLA6G1011L-200RG |
|---|---|
| Manufacturer | Ampleon |
| File Size | 355.57 KB |
| Description | Power LDMOS transistor |
| Datasheet |
 BLA6G1011L-200RG Datasheet
|
|
|
General Description
200 W LDMOS power transistor for avionics applications at frequencies from 1030 MHz to 1090 MHz.
Table 1.
Typical RF performance at Tcase = 25 C.
Key Features
- Typical pulsed RF performance at frequencies from 1030 MHz to 1090 MHz, a supply voltage of 28 V and an IDq of 100 mA:.
- Output power = 200 W.
- Power gain = 20 dB.
- Efficiency = 65 %.
- Easy power control.
- Integrated ESD protection.
- Enhanced ruggedness.
- High efficiency.
- Excellent thermal stability.
- Designed for b.