Datasheet Details
| Part number | BLA6H1011-600 |
|---|---|
| Manufacturer | Ampleon |
| File Size | 333.39 KB |
| Description | LDMOS avionics power transistor |
| Datasheet |
 BLA6H1011-600 Datasheet
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General Description
600 W LDMOS pulsed power transistor intended for TCAS and IFF applications in the 1030 MHz to 1090 MHz range.
Table 1.
Test information Typical RF performance at Tcase = 25 C; tp = 50 s; = 2 %; IDq = 100 mA; in a class-AB production test circuit.
Key Features
- Typical pulsed RF performance at a frequency of 1030 MHz to 1090 MHz, a supply voltage of 48 V, an IDq of 100 mA, a tp of 50 s with of 2 %:.
- Output power = 600 W.
- Power gain = 17 dB.
- Efficiency = 52 %.
- Easy power control.
- Integrated ESD protection.
- High flexibility with respect to pulse.
