BLA6G1011-200R - Power LDMOS transistor

Description

200 W LDMOS power transistor for avionics applications at frequencies from 1030 MHz to 1090 MHz.

Table 1.

Typical RF performance at Tcase = 25 C.

Features

• Typical pulsed RF performance at frequencies from 1030 MHz to 1090 MHz, a supply voltage of 28 V and an IDq of 100 mA:.
• Output power = 200 W.
• Power gain = 20 dB.
• Efficiency = 65 %.
• Easy power control.
• Integrated ESD protection.
• Enhanced ruggedness.
• High efficiency.
• Excellent thermal stability.
• Designed for b.