BFU550A Datasheet | NXP Semiconductors

627 NPN wideband silicon RF transistor Rev. 1 - 13 January 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon RF transistor for high speed, low noise applications in a plastic, 3-pin SOT23 package. The BFU550A is part of the BFU5 family of transistors, suitable for small signal to medium power applications up to 2 GHz. 1.2 Features and benefits - Low noise, high breakdown RF transistor - AEC-Q101 qualified - Minimum noise figure (NFmin) = 0.6 d B at 900 MHz - Maximum stable gain 18 d B at 900 MHz - 11 GHz f T silicon technology 1.3 Applications - Applications requiring high supply voltages and high breakdown voltages - Broadband amplifiers up to 2 GHz - Low noise amplifiers for ISM applications - ISM band oscillators 1.4 Quick reference data Table 1. Quick reference data Tamb = 25 C unless otherwise specified Symbol Parameter Conditions VCB collector-base voltage open emitter VCE collector-emitter voltage open base shorted base VEB emitter-base voltage open collector IC collector current Ptot total power dissipation Tsp  87 C h FE DC current gain IC = 15 m A; VCE = 8...