Datasheet4U Logo Datasheet4U.com

BFU550 - NPN wideband silicon RF transistor

Description

NPN silicon RF transistor for high speed, low noise applications in a plastic, 4-pin dualemitter SOT143B package.

The BFU550 is part of the BFU5 family of transistors, suitable for small signal to medium power applications up to 2 GHz.

Features

  • Low noise, high breakdown RF transistor.
  • AEC-Q101 qualified.
  • Minimum noise figure (NFmin) = 0.7 dB at 900 MHz.
  • Maximum stable gain 21 dB at 900 MHz.
  • 11 GHz fT silicon technology 1.3.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
BFU580Q NPN Transistor INCHANGE
BFU450C FILTERS Murata Electronics
BFU450C4N FILTERS Murata Electronics
BFU450K3 FILTERS Murata Electronics
BFU630F NPN wideband silicon RF transistor NXP Semiconductors

Other Datasheets by NXP Semiconductors

Part Number Description
BFU550A NPN wideband silicon RF transistor
BFU550W NPN wideband silicon RF transistor
BFU550X NPN wideband silicon RF transistor
BFU550XR NPN wideband silicon RF transistor
BFU510 NPN SiGe wideband transistor

Full PDF Text Transcription

Click to expand full text
SOT143B BFU550 NPN wideband silicon RF transistor Rev. 2.1 — 17 April 2019 Product data sheet 1 Product profile 1.1 General description NPN silicon RF transistor for high speed, low noise applications in a plastic, 4-pin dualemitter SOT143B package. The BFU550 is part of the BFU5 family of transistors, suitable for small signal to medium power applications up to 2 GHz. 1.2 Features and benefits • Low noise, high breakdown RF transistor • AEC-Q101 qualified • Minimum noise figure (NFmin) = 0.7 dB at 900 MHz • Maximum stable gain 21 dB at 900 MHz • 11 GHz fT silicon technology 1.3 Applications • Applications requiring high supply voltages and high breakdown voltages • Broadband amplifiers up to 2 GHz • Low noise amplifiers for ISM applications • ISM band oscillators 1.
Published: |