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SOT143B
BFU550X
NPN wideband silicon RF transistor
Rev. 2 — 12 April 2019
Product data sheet
1 Product profile
1.1 General description
NPN silicon RF transistor for high speed, low noise applications in a plastic, 4-pin dualemitter SOT143B package.
The BFU550X is part of the BFU5 family of transistors, suitable for small signal to medium power applications up to 2 GHz.
1.2 Features and benefits
• Low noise, high breakdown RF transistor • AEC-Q101 qualified • Minimum noise figure (NFmin) = 0.75 dB at 900 MHz • Maximum stable gain 21.5 dB at 900 MHz • 11 GHz fT silicon technology
1.3 Applications
• Applications requiring high supply voltages and high breakdown voltages • Broadband amplifiers up to 2 GHz • Low noise amplifiers for ISM applications • ISM band oscillators
1.
BFU550X Datasheet
