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BF909R - N-channel dual gate MOS-FET

Download the BF909R datasheet PDF. This datasheet also covers the BF909 variant, as both devices belong to the same n-channel dual gate mos-fet family and are provided as variant models within a single manufacturer datasheet.

General Description

Enhancement type field-effect transistor in a plastic microminiature SOT143 or SOT143R package.

Key Features

  • Specially designed for use at 5 V supply voltage.
  • High forward transfer admittance.
  • Short channel transistor with high forward transfer admittance to input capacitance ratio.
  • Low noise gain controlled amplifier up to 1 GHz.
  • Superior cross-modulation performance during AGC. transistor consists of an amplifier MOS-FET with source and substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during AGC.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (BF909-NXP.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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Other Datasheets by NXP Semiconductors

Part Number Description
BF909 N-channel dual gate MOS-FET
BF909WR N-channel dual-gate MOS-FET
BF901 Silicon n-channel dual gate MOS-FETs
BF901R Silicon n-channel dual gate MOS-FETs
BF904 N-channel dual gate MOS-FETs

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
NXP Semiconductors N-channel dual gate MOS-FETs Product specification BF909; BF909R FEATURES • Specially designed for use at 5 V supply voltage • High forward transfer admittance • Short channel transistor with high forward transfer admittance to input capacitance ratio • Low noise gain controlled amplifier up to 1 GHz • Superior cross-modulation performance during AGC. transistor consists of an amplifier MOS-FET with source and substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during AGC. CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or handling.