Datasheet4U Logo Datasheet4U.com

BF909WR - N-channel dual-gate MOS-FET

Datasheet Summary

Description

s, b source d drain g2 gate 2 g1 gate 1 APPLICATIONS

communications equipment.

Features

  • Specially designed for use at 5 V supply voltage.
  • Short channel transistor with high forward transfer admittance to input capacitance ratio.
  • Low noise gain controlled amplifier up to 1 GHz.
  • Superior cross-modulation performance during AGC.

📥 Download Datasheet

Datasheet preview – BF909WR

Datasheet Details

Part number BF909WR
Manufacturer NXP
File Size 180.38 KB
Description N-channel dual-gate MOS-FET
Datasheet download datasheet BF909WR Datasheet
Additional preview pages of the BF909WR datasheet.

📁 Similar Datasheet

Other Datasheets by NXP
  • BF909 - N-channel dual gate MOS-FET
  • BF909R - N-channel dual gate MOS-FET
  • BF901 - Silicon n-channel dual gate MOS-FETs
  • BF901R - Silicon n-channel dual gate MOS-FETs
  • BF904 - N-channel dual gate MOS-FETs
  • BF904A - N-channel dual gate MOS-FETs
  • BF904AR - N-channel dual gate MOS-FETs
  • BF904AWR - N-channel dual gate MOS-FETs

Full PDF Text Transcription

Click to expand full text
DISCRETE SEMICONDUCTORS DATA SHEET BF909WR N-channel dual-gate MOS-FET Product specification Supersedes data of 1997 Sep 05 2010 Sep 15 NXP Semiconductors N-channel dual-gate MOS-FET Product specification BF909WR FEATURES  Specially designed for use at 5 V supply voltage  Short channel transistor with high forward transfer admittance to input capacitance ratio  Low noise gain controlled amplifier up to 1 GHz  Superior cross-modulation performance during AGC. PINNING PIN 1 2 3 4 SYMBOL DESCRIPTION s, b source d drain g2 gate 2 g1 gate 1 APPLICATIONS  VHF and UHF applications with 3 to 7 V supply voltage handbook, halfpage d such as television tuners and professional communications equipment.
Published: |