Click to expand full text
NXP Semiconductors
N-channel dual gate MOS-FETs
Product specification
BF909; BF909R
FEATURES
• Specially designed for use at 5 V supply voltage • High forward transfer admittance • Short channel transistor with high forward transfer
admittance to input capacitance ratio • Low noise gain controlled amplifier up to 1 GHz • Superior cross-modulation performance during AGC.
transistor consists of an amplifier MOS-FET with source and substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during AGC.
CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or handling.
BF909 Datasheet
