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NTE2912 - N-Channel MOSFET

Description

The NTE2912 Power MOSFET utilizes advanced processing techniques to achieve extremely low on

resistance per silicon area.

Features

  • D Advanced Process technology D Ultra Low ON.
  • Resistance D Dynamic dv/dt Rating D +1755C Operating Temperature D Fast Switching D Fully Avalanche Rated G D S.

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Datasheet Details

Part number NTE2912
Manufacturer NTE Electronics (defunct)
File Size 77.98 KB
Description N-Channel MOSFET
Datasheet download datasheet NTE2912 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NTE2912 MOSFET N−Channel, Enhancement Mode High Speed Switch TO220 Type Package Features: D Advanced Process technology D Ultra Low ON−Resistance D Dynamic dv/dt Rating D +1755C Operating Temperature D Fast Switching D Fully Avalanche Rated G D S Description: The NTE2912 Power MOSFET utilizes advanced processing techniques to achieve extremely low on−resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO220 package is universally preferred for all commercial−industrial applications at power dissipation levels to approximately 50 watts.
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