NTE275 transistors equivalent, silicon complementary transistors.
D High DC Current Gain: hFE = 3000 Typ @ IC = 2A D Low Collector
–Emitter Saturation Voltage: VCE(sat) = 2V Max @ IC = 2A D Collector
–Emit.
Features:
D High DC Current Gain: hFE = 3000 Typ @ IC = 2A D Low Collector
–Emitter Saturation Voltage:.
The NTE274 (NPN) and NTE275 (PNP) are silicon complementary Darlington transistors in a TO66 type case designed for general purpose amplifier, low
–frequency switching and hammer driver applications.
Features:
D High DC Current Gain:.
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