NTE275 Datasheet | NTE Electronics

Description : The NTE274 (NPN) and NTE275 (PNP) are silicon plementary Darlington transistors in a TO66 type case designed for general purpose amplifier, low- frequency switching and hammer driver applications. Features : D High DC Current Gain: h FE = 3000 Typ @ IC = 2A D Low Collector- Emitter Saturation Voltage: VCE(sat) = 2V Max @ IC = 2A D Collector- Emitter Sustaining Voltage: VCEO(sus) = 80V Min D Monolithic Construction with Built- In Base- Emitter Shunt Resistors Absolute Maximum Ratings: Collector- Emitter Voltage, VCEO - - - - - - - - - - . . . . 80V Collector- Base Voltage, VCB - - - - - - - - - - - . . 80V Emitter- Base Voltage, VEB - - - - - - - - - - - . . . . 5V Collector Current, IC Continuous - - - - - - - - - - - - - . . 4A Peak - - - - - - - - - - - - - - . ....