NTE275 - Silicon Complementary Transistors

Product Overview

NTE

NTE275 Silicon Complementary Transistors by NTE - Datasheet Preview — Datasheet preview – NTE275

Datasheet Details

Part number	NTE275
Manufacturer	NTE
File Size	25.78 KB
Description	Silicon Complementary Transistors
Datasheet	NTE275 Datasheet
Note	This datasheet PDF includes multiple part numbers: NTE275, NTE274. Please refer to the document for exact specifications by model.
Additional preview pages of the NTE275 datasheet.

Product details

Description

The NTE274 (NPN) and NTE275 (PNP) are silicon complementary Darlington transistors in a TO66 type case designed for general purpose amplifier, low frequency switching and hammer driver applications.

Features

D High DC Current Gain: hFE = 3000 Typ @ IC = 2A D Low Collector.
Emitter Saturation Voltage: VCE(sat) = 2V Max @ IC = 2A D Collector.
Emitter Sustaining Voltage: VCEO(sus) = 80V Min D Monolithic Construction with Built.
In Base.
Emitter Shunt Resistors Absolute Maximum Ratings: Collector.
Emitter Voltage, VCEO.
. . . . 80V Collector.
Base Voltage, VCB.

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Other Datasheets by NTE

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Published: Aug 18, 2016 |