NTE275 Features
* D High DC Current Gain: hFE = 3000 Typ @ IC = 2A D Low Collector
* Emitter Saturation Voltage: VCE(sat) = 2V Max @ IC = 2A D Collector
* Emitter Sustaining Voltage: VCEO(sus) = 80V Min D Monolithic Construction with Built
* In Base
* Emitter Shunt Resistors Absolute Maximum
Datasheet Details
NTE275, NTE274
NTE
25.78 KB
Silicon complementary transistors.
This datasheet PDF includes multiple part numbers: NTE275, NTE274.
Please refer to the document for exact specifications by model.
📁 Related Datasheet
NTE27 Germanium PNP Transistor High Current / High Gain Amp (NTE)
NTE270 Silicon Complementary Transistors Darlington Power Amp / Switch (NTE)
NTE2708 Integrated Circuit NMOS / 8K UV EPROM / 450ns (NTE)
NTE271 Silicon Complementary Transistors (NTE)
NTE2716 Integrated Circuit NMOS / 16K UV Erasable PROM (NTE)
NTE272 Silicon Darlington Complementary Power Amplifiers (NTE)
NTE273 Silicon Darlington Complementary (NTE)
NTE2732A Integrated Circuit 32K (4K x 8) NMOS UV Erasable PROM (NTE)
NTE275 Distributor
