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NTE2708 - Integrated Circuit NMOS / 8K UV EPROM / 450ns

Description

The NTE2708 is an ultra violet light

erasable, electrically programmable read only memory.

bit length.

channel silicon gate technology for high speed and simple interface with

Features

  • D 1024 X 8 Organization D All Inputs and Outputs Fully TTL Compatible D Static Operation (No Clocks, No Refresh) D Performance Ranges: Max Access: 450ns Min Cycle: 450ns D 3.
  • State Outputs for OR.
  • Ties D 8.
  • Bit Output D Plug.
  • Compatible Pin.
  • Outs Allowing Interchangeability Absolute Maximum Ratings: (TA = 0° to +70°C, Note 1 unless otherwise specified) Supply Voltage, VCC (Note 2).

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Datasheet Details

Part number NTE2708
Manufacturer NTE Electronics (defunct)
File Size 30.80 KB
Description Integrated Circuit NMOS / 8K UV EPROM / 450ns
Datasheet download datasheet NTE2708 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NTE2708 Integrated Circuit NMOS, 8K UV EPROM, 450ns Description: The NTE2708 is an ultra–violet light–erasable, electrically programmable read only memory. It has 8, 192 bits organized as 1024 words of 8–bit length. This device is fabricated using N–channel silicon– gate technology for high speed and simple interface with MOS and bipolar circuits. All inputs (including program data inputs) can be driven by Series 74 TTL circuits without the use of external pull–up resistors. Each output can drive one Series 74 or 74LS TTL circuit without external resistors. The data outputs for the NTE2708 are three–state for OR tying multiple devices on a common bus. This EPROM is designed for high–density fixed memory applications where fast turn arounds and/or program changes are required.