NTE271 - Silicon Complementary Transistors

Product Overview

NTE

NTE271 Silicon Complementary Transistors by NTE - Datasheet Preview — Datasheet preview – NTE271

Datasheet Details

Part number	NTE271
Manufacturer	NTE
File Size	24.87 KB
Description	Silicon Complementary Transistors
Datasheet	NTE271 Datasheet
Note	This datasheet PDF includes multiple part numbers: NTE271, NTE270. Please refer to the document for exact specifications by model.
Additional preview pages of the NTE271 datasheet.

Product details

Description

The NTE270 (NPN) and NTE271 (PNP) are silicon Darlington complementary power transistors in a TO218 type package designed for general purpose amplifier and low frequency switching applications.

Features

D High DC Current Gain: hFE = 1000 Min @ IC = 5A, VCE = 4V D Collector.
Emitter Sustaining Voltage: VCEO(sus) = 100V Min @ 30mA D Monolithic Construction with Built.
In Base.
Emitter Shunt Resistor Absolute Maximum Ratings: Collector.
Emitter Voltage, VCEO.
. . . 100V Collector.
Base Voltage, VCB.

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Other Datasheets by NTE

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Published: Aug 18, 2016 |