Datasheet4U Logo Datasheet4U.com

NTE271 - Silicon Complementary Transistors

Download the NTE271 datasheet PDF. This datasheet also covers the NTE270 variant, as both devices belong to the same silicon complementary transistors family and are provided as variant models within a single manufacturer datasheet.

General Description

The NTE270 (NPN) and NTE271 (PNP) are silicon Darlington complementary power transistors in a TO218 type package designed for general purpose amplifier and low frequency switching applications.

Key Features

  • D High DC Current Gain: hFE = 1000 Min @ IC = 5A, VCE = 4V D Collector.
  • Emitter Sustaining Voltage: VCEO(sus) = 100V Min @ 30mA D Monolithic Construction with Built.
  • In Base.
  • Emitter Shunt Resistor Absolute Maximum Ratings: Collector.
  • Emitter Voltage, VCEO.
  • . . . 100V Collector.
  • Base Voltage, VCB.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (NTE270_NTEElectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number NTE271
Manufacturer NTE Electronics (defunct)
File Size 24.87 KB
Description Silicon Complementary Transistors
Datasheet download datasheet NTE271 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
NTE276 Silicon Controlled Rectifier NTE Electronics
NTE2000 (NTExxxx) Linear Integrated Circuits NTE Electronics
NTE2001 (NTExxxx) Linear Integrated Circuits NTE Electronics
NTE2003 (NTExxxx) Linear Integrated Circuits NTE Electronics
NTE2004 (NTExxxx) Linear Integrated Circuits NTE Electronics

Other Datasheets by NTE Electronics (defunct)

Part Number Description
NTE2716 Integrated Circuit NMOS / 16K UV Erasable PROM
NTE27 Germanium PNP Transistor High Current / High Gain Amp
NTE270 Silicon Complementary Transistors Darlington Power Amp / Switch
NTE2708 Integrated Circuit NMOS / 8K UV EPROM / 450ns
NTE272 Silicon Darlington Complementary Power Amplifiers

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
NTE270 (NPN) & NTE271 (PNP) Silicon Complementary Transistors Darlington Power Amp, Switch Description: The NTE270 (NPN) and NTE271 (PNP) are silicon Darlington complementary power transistors in a TO218 type package designed for general purpose amplifier and low frequency switching applications. Features: D High DC Current Gain: hFE = 1000 Min @ IC = 5A, VCE = 4V D Collector–Emitter Sustaining Voltage: VCEO(sus) = 100V Min @ 30mA D Monolithic Construction with Built–In Base–Emitter Shunt Resistor Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Collector–Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .