NTE271 transistors equivalent, silicon complementary transistors.
D High DC Current Gain: hFE = 1000 Min @ IC = 5A, VCE = 4V D Collector
–Emitter Sustaining Voltage: VCEO(sus) = 100V Min @ 30mA D Monolithic Construction .
Features: D High DC Current Gain: hFE = 1000 Min @ IC = 5A, VCE = 4V D Collector
–Emitter Sustaining Vo.
The NTE270 (NPN) and NTE271 (PNP) are silicon Darlington complementary power transistors in a TO218 type package designed for general purpose amplifier and low frequency switching applications.
Features: D High DC Current Gain: hFE = 1000 Min @ IC .
Image gallery
TAGS
Download (Size : 24.87KB)