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NTE272 - Silicon Darlington Complementary Power Amplifiers

Description

The NTE272 (NPN) and NTE273 (PNP) are silicon complementary Power Amplifiers in a TO202 type case designed for use in complementary amplifiers and driver applications.

Features

  • D High DC Current Gain: hFE = 25,000 (Min) @ IC = 200mA = 15,000 (Min) @ IC = 500mA D Collector.
  • Emitter Breakdown Voltage: V(BR)CES = 40V @ IC = 500mA D Low Collector.
  • Emitter Saturation Voltage: VCE(sat) = 1.5V @ IC = 1A D Monolithic Construction for High Reliability Absolute Maximum Ratings: Collector.
  • Emitter Voltage (Note 2), VCEO.
  • . 40V Collector.
  • Emitter Voltage, VCES.

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Datasheet Details

Part number NTE272
Manufacturer NTE Electronics (defunct)
File Size 22.39 KB
Description Silicon Darlington Complementary Power Amplifiers
Datasheet download datasheet NTE272 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NTE272 (NPN) & NTE273 (PNP) Silicon Darlington Complementary Power Amplifiers Description: The NTE272 (NPN) and NTE273 (PNP) are silicon complementary Power Amplifiers in a TO202 type case designed for use in complementary amplifiers and driver applications. Features: D High DC Current Gain: hFE = 25,000 (Min) @ IC = 200mA = 15,000 (Min) @ IC = 500mA D Collector–Emitter Breakdown Voltage: V(BR)CES = 40V @ IC = 500mA D Low Collector–Emitter Saturation Voltage: VCE(sat) = 1.5V @ IC = 1A D Monolithic Construction for High Reliability Absolute Maximum Ratings: Collector–Emitter Voltage (Note 2), VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V Collector–Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .