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NIKO-SEM

PZD502CYB Datasheet Preview

PZD502CYB Datasheet

N-Channel MOSFET

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NIKO-SEM
N-Channel Logic Level Enhancement PZD502CYB
Mode Field Effect Transistor
SOT-523
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
20V 450mΩ
ID
0.7A
ESD Protected Gate
ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 70 °C
Power Dissipation
TA = 25 °C
TA = 70 °C
Operating Junction & Storage Temperature Range
VDS
VGS
ID
IDM
PD
Tj, Tstg
1. GATE
2. DRAIN
3. SOURCE
LIMITS
20
±8
0.7
0.6
2
0.4
0.2
-55 to 150
UNITS
V
V
A
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
MAXIMUM
UNITS
Junction-to-Ambient2
RθJA
280 °C/W
1Pulse width limited by maximum junction temperature.
2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
environment with TA =25°C. The value in any given application depends on the user's specific board design.
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State
Resistance1
Forward Transconductance1
V(BR)DSS
VGS(th)
IGSS
IDSS
RDS(ON)
gfs
STATIC
VGS = 0V, ID = 250µA
VDS = VGS, ID = 250µA
VDS = 0V, VGS = ±8V
VDS = 16V, VGS = 0V
VDS = 10V, VGS = 0V, TJ = 55 °C
VGS = 1.8V, ID = 0.35A
VGS = 2.5V, ID = 0.5A
VGS = 4.5V, ID = 0.6A
VDS = 5V, ID =0.6A
LIMITS
UNIT
MIN TYP MAX
20
0.35 0.6
1
V
±30 µA
1
µA
10
384 850
274 765 mΩ
213 450
2S
REV 0.9
1
C-17-2




NIKO-SEM

PZD502CYB Datasheet Preview

PZD502CYB Datasheet

N-Channel MOSFET

No Preview Available !

NIKO-SEM
N-Channel Logic Level Enhancement PZD502CYB
Mode Field Effect Transistor
SOT-523
Halogen-Free & Lead-Free
DYNAMIC
Input Capacitance
Output Capacitance
Ciss
Coss
VGS = 0V, VDS = 10V, f = 1MHz
38
16
Reverse Transfer Capacitance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS = 10V, VGS = 4.5V,
ID = 0.6A
VDS =6V,
ID 0.6 A, VGS = 4.5V, RGS = 6Ω
12
1.4
0.4
0.8
6
18
30
25
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C)
Continuous Current
Forward Voltage1
IS
VSD
Reverse Recovery Time
trr
Reverse Recovery Charge
Qrr
1Pulse test : Pulse Width 300 µsec, Duty Cycle 2%.
2Independent of operating temperature.
IF = 0.15A, VGS = 0V
VDS =12V,
IF = 2A,dIF/dt = 100 A/µs
233
630
0.7
1.2
pF
nC
nS
A
V
nS
nC
REV 0.9
2
C-17-2


Part Number PZD502CYB
Description N-Channel MOSFET
Maker NIKO-SEM
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PZD502CYB Datasheet PDF






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