900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






NIKO-SEM

PZD502CY Datasheet Preview

PZD502CY Datasheet

N-Channel MOSFET

No Preview Available !

 
N  IKO-SEM
 
 
 
N-Channel Logic Level Enhancement PZD502CY
Mode Field Effect Transistor
SOT-323
(Preliminary)
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
20V 450mΩ
ID
0.75A
ESD Protected Gate
1. GATE
2. DRAIN
3. SOURCE
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 70 °C
Power Dissipation
TA = 25 °C
TA = 70 °C
Operating Junction & Storage Temperature Range
ID
IDM
PD
Tj, Tstg
LIMITS
20
±8
0.75
0.6
2
0.49
0.3
-55 to 150
UNITS
V
V
A
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
MAXIMUM
UNITS
Junction-to-Ambient2
RJA
255 °C/W
1Pulse width limited by maximum junction temperature.
2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
environment with TA =25°C. The value in any given application depends on the user's specific board design.
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State
Resistance1
Forward Transconductance1
V(BR)DSS
VGS(th)
IGSS
IDSS
RDS(ON)
gfs
STATIC
VGS = 0V, ID = 250A
VDS = VGS, ID = 250A
VDS = 0V, VGS = ±8V
VDS = 16V, VGS = 0V
VDS = 10V, VGS = 0V, TJ = 55 °C
VGS = 1.8V, ID = 0.35A
VGS = 2.5V, ID = 0.5A
VGS = 4.5V, ID = 0.6A
VDS = 5V, ID =0.6A
LIMITS
UNIT
MIN TYP MAX
20
0.35 0.65 1
±30
1
10
V
A
A
464 850
307 765 mΩ
240 450
2S
  REV 0.8
1
C-17-3




NIKO-SEM

PZD502CY Datasheet Preview

PZD502CY Datasheet

N-Channel MOSFET

No Preview Available !

 
N  IKO-SEM
 
 
N-Channel Logic Level Enhancement PZD502CY
Mode Field Effect Transistor
SOT-323
(Preliminary)
Halogen-Free & Lead-Free
 
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0V, VDS = 4.5V, f = 1MHz
VDS = 10V, VGS = 4.5V,
ID = 0.6A
VDS =6V,
ID 0.6 A, VGS = 4.5V, RGS = 6Ω
38
16 pF
12
1.4
0.4 nC
0.8
6
18
nS
30
25
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
Forward Voltage1
IS
VSD IF = 0.15A, VGS = 0V
0.75 A
1.2 V
Reverse Recovery Time
trr
Reverse Recovery Charge
Qrr
1Pulse test : Pulse Width 300 sec, Duty Cycle 2%.
2Independent of operating temperature.
IF = 2A,dIF/dt = 100 A/μs
233 nS
630 nC
  REV 0.8
2
C-17-3


Part Number PZD502CY
Description N-Channel MOSFET
Maker NIKO-SEM
PDF Download

PZD502CY Datasheet PDF






Similar Datasheet

1 PZD502CMA N-Channel MOSFET
UNIKC
2 PZD502CY N-Channel MOSFET
NIKO-SEM
3 PZD502CYB N-Channel MOSFET
UNIKC
4 PZD502CYB N-Channel MOSFET
NIKO-SEM





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z



Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy