900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






UNIKC

PZ0703ED Datasheet Preview

PZ0703ED Datasheet

P-Channel MOSFET

No Preview Available !

PZ0703ED
P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-30V
7.5mΩ @VGS = -10V
ID
-70A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS -30
Gate-Source Voltage
VGS ±20
Continuous Drain Current2,3
Pulsed Drain Current1
TC= 25 °C
TC= 100 °C
ID
IDM
-70
-44
-160
Avalanche Current
IAS -67
Avalanche Energy
L=0.1mH
EAS
227
Power Dissipation
TC= 25 °C
TC= 100°C
PD
78
31
Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
ESD Class
HBM
4
UNITS
V
V
A
mJ
W
°C
KV
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
1Pulse width limited by maximum junction temperature.
2Limited only by maximum temperature allowed.
3Package limitation current is -60A.
SYMBOL
RqJC
TYPICAL
MAXIMUM UNITS
1.6 °C / W
REV 1.0
1 2014/4/11




UNIKC

PZ0703ED Datasheet Preview

PZ0703ED Datasheet

P-Channel MOSFET

No Preview Available !

PZ0703ED
P-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
Zero Gate Voltage Drain Current
IDSS
On-State Drain Current1
ID(ON)
VGS = 0V, ID = -250mA
VDS = VGS, ID = -250mA
VDS = 0V, VGS = ±16V
VDS =-24V, VGS = 0V
VDS =-20V, VGS = 0V, TJ = 125°C
VDS = -5V, VGS = -10V
-30
-1 -1.6
-160
-3
±30
1
10
V
mA
mA
A
Drain-Source On-State
Resistance1
RDS(ON)
VGS =-4.5V, ID =-20A
VGS =-10V, ID =-20A
7.4 12
5 7.5
Forward Transconductance1
gfs
VDS =-5V, ID =-20A
53 S
DYNAMIC
Input Capacitance
Output Capacitance
Ciss
Coss
VGS = 0V, VDS = -15V, f = 1MHz
5290
995
pF
Reverse Transfer Capacitance
Crss
824
Gate Resistance
Rg VGS = 0V, VDS = 0V, f = 1MHz
2Ω
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS =-15V, VGS= -0V,ID = -20A
@VDS =-15V ,ID -20A,
VGS=-10V,RGS=6Ω
123
16 nC
29
32
24
nS
90
44
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
IS
-70 A
Forward Voltage1
VSD IF = -10A, VGS = 0V
-1.3 V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = -20A, dlF/dt = 100A / μS
31 nS
16 nC
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
3Package limitation current is -60A.
REV 1.0
2 2014/4/11


Part Number PZ0703ED
Description P-Channel MOSFET
Maker UNIKC
PDF Download

PZ0703ED Datasheet PDF






Similar Datasheet

1 PZ0703ED P-Channel MOSFET
UNIKC
2 PZ0703EK MOSFET
UNIKC
3 PZ0703ETF P-Channel MOSFET
NIKO-SEM
4 PZ0703EV P-Channel MOSFET
UNIKC





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z



Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy