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UNIKC

PZ0703EV Datasheet Preview

PZ0703EV Datasheet

P-Channel MOSFET

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PZ0703EV
P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-30V
7mΩ @VGS = -10V
ID
-15A
SOP- 08
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS -30
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 70 °C
ID
IDM
-15
-11
-69
Avalanche Current
IAS -69
Avalanche Energy
L = 0.1mH
EAS
238
Power Dissipation
TA = 25 °C
TA = 70 °C
PD
2.5
1.6
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJA
TYPICAL
MAXIMUM UNITS
50 °C / W
Ver 1.0
1 2013-5-8




UNIKC

PZ0703EV Datasheet Preview

PZ0703EV Datasheet

P-Channel MOSFET

No Preview Available !

PZ0703EV
P-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
VGS = 0V, ID = -250mA
VDS = VGS, ID = -250mA
VDS = 0V, VGS = ±16V
-30
-1.0 -1.7 -3.0
±30
Zero Gate Voltage Drain Current
IDSS
VDS = -24V, VGS = 0V
VDS = -20V, VGS = 0V , TJ = 125 °C
-1
-10
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = -4.5V, ID = -10A
VGS = -10V, ID = -15A
VDS = -5V, ID = -15A
6.8 12
4.8 7
25
DYNAMIC
Input Capacitance
Ciss
5200
Output Capacitance
Coss VGS = 0V, VDS = -15V, f = 1MHz
885
Reverse Transfer Capacitance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS = 0.5V(BR)DSS,
ID = -15A, VGS = -10V
VDS = -15V, ID @ -15A,
VGS = -10V, RGS = 6Ω
789
119
14
31
26
29
225
124
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
Forward Voltage1
IS
VSD IS = -15A, VGS = 0V
-15
-1.2
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = -15A, dl/dt = 100A / ms
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
35
20
2Independent of operating temperature.
UNITS
V
nA
mA
S
pF
nC
nS
A
V
nS
nC
Ver 1.0
2 2013-5-8


Part Number PZ0703EV
Description P-Channel MOSFET
Maker UNIKC
PDF Download

PZ0703EV Datasheet PDF






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