NP82N055DHE Features
* Channel temperature 175 degree rated
* Super low on-state resistance RDS(on) = 8.6 mΩ MAX. (VGS = 10 V, ID = 41 A)
* Low Ciss: Ciss = 3500 pF TYP.
* Built-in gate protection diode 5 NP82N055KHE (TO-220AB) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Volta
NP82N055DHE, NP82N055CHE Datasheet
Datasheet Details
NP82N055DHE, NP82N055CHE
NEC
104.08 KB
Mos field effect transistor.
This datasheet PDF includes multiple part numbers: NP82N055DHE, NP82N055CHE.
Please refer to the document for exact specifications by model.
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NP82N055DHE Distributor
