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  NEC Electronic Components Datasheet  

2SC4226 Datasheet

NPN SILICON EPITAXIAL TRANSISTOR

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DATA SHEET
SILICON TRANSISTOR
2SC4226
HIGH FREQUENCY LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
SUPER MINI MOLD
DESCRIPTION
The 2SC4226 is a low supply voltage transistor designed for VHF, UHF low
noise amplifier.
It is suitable for a high density surface mount assembly since the transistor
has been applied small mini mold package.
FEATURES
• Low Noise
NF = 1.2 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA
• High Gain
|S21e|2 = 9.0 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA
• Small Mini Mold Package
EIAJ: SC-70
ORDERING INFORMATION
PART
NUMBER
2SC4226-T1
2SC4226-T2
QUANTITY
3 Kpcs/Reel.
3 Kpcs/Reel.
PACKING STYLE
Embossed tape 8 mm wide.
Pin3 (Collector)face to perforation side of the
tape.
Embossed tape 8 mm wide.
Pin1 (Emitter), Pin2 (Base) face to perforation
side of the tape.
* Please contact with responsible NEC person, if you require evaluation
sample. Unit sample quantity shall be 50 pcs. (Part No.: 2SC4226)
PACKAGE DIMENSIONS
in millimeters
2.1 ± 0.1
1.25 ± 0.1
2
13
Marking
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
The information in this document is subject to change without notice.
Document No. P10368EJ3V0DS00 (3rd edition)
(Previous No. TC-2402)
Date Published July 1995 P
Printed in Japan
© 1993


  NEC Electronic Components Datasheet  

2SC4226 Datasheet

NPN SILICON EPITAXIAL TRANSISTOR

No Preview Available !

2SC4226
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
VCBO
VCEO
VEBO
IC
PT
Tj
Tstg
20
12
3
100
150
150
–65 to +150
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
V
V
V
mA
mW
°C
°C
CHARACTERISTIC
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain Bandwidth Product
Feed back Capacitance
Insertion Power Gain
Noise Figure
SYMBOL
ICBO
IEBO
hFE
fT
Cre
|S21e|2
NF
MIN.
40
3.0
7
TYP.
110
4.5
0.7
9
1.2
MAX.
1.0
1.0
250
1.5
2.5
UNIT
µA
µA
GHz
pF
dB
dB
TEST CONDITION
VCB = 10 V, IE = 0
VEB = 1 V, IC = 0
VCE = 3 V, IC = 7 mA*1
VCE = 3 V, IC = 7 mA
VCE = 3 V, IE = 0, f = 1 MHz*2
VCE = 3 V, IC = 7 mA, f = 1 GHz
VCE = 3 V, IC = 7 mA, f = 1 GHz
*1 Pulse Measurement ; PW 350 µs, Duty Cycle 2 % Pulsed.
*2 Measured with 3 terminals bridge, Emitter and Case should be grounded.
hFE Classification
Rank
Marking
hFE
R23
R23
40 to 80
R24
R24
70 to 140
R25
R25
125 to 250
2


Part Number 2SC4226
Description NPN SILICON EPITAXIAL TRANSISTOR
Maker NEC
Total Page 8 Pages
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