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GME

2SC4226 Datasheet Preview

2SC4226 Datasheet

NPN Silicon Epitaxial Planar Transistor

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Production specification
NPN Silicon Epitaxial Planar Transistor
FEATURES
Low noise.
High gain.
Power dissipation.(PC=150mW)
Pb
Lead-free
2SC4226
APPLICATIONS
High frequency low noise amplifier.
ORDERING INFORMATION
Type No.
Marking
2SC4226
R23/R24/R25
SOT-323
Package Code
SOT-323
MAXIMUM RATING @ Ta=25unless otherwise specified
Symbol
Parameter
Value
VCBO
Collector-Base Voltage
20
VCEO
Collector-Emitter Voltage
12
VEBO
Emitter-Base Voltage
3
IC Collector Current -Continuous
100
PC Collector Dissipation
150
Tj,Tstg
Junction and Storage Temperature
-65 to +150
Units
V
V
V
mA
mW
F042
Rev.A
www.gmesemi.com
1




GME

2SC4226 Datasheet Preview

2SC4226 Datasheet

NPN Silicon Epitaxial Planar Transistor

No Preview Available !

Production specification
NPN Silicon Epitaxial Planar Transistor
2SC4226
ELECTRICAL CHARACTERISTICS @ Ta=25unless otherwise specified
Parameter
Symbol Test conditions
MIN TYP MAX UNIT
Collector-base breakdown voltage
Collector-emitter breakdown
voltage
V(BR)CBO
V(BR)CEO
IC=100μA,IE=0
IC=1mA,IB=0
20
12
V
V
Emitter-base breakdown voltage
V(BR)EBO IE=100μA,IC=0
3
V
Collector cut-off current
ICBO VCB=10V,IE=0
1.0 μA
Emitter cut-off current
IEBO VEB=1V,IC=0
1.0 μA
DC current gain
hFE VCE=3V,IC=7mA
40 110 250
Feed back capacitance
Cre VCE=3V,IE=0mA,f=1MHz
0.7 1.5 pF
Transition frequency
fT VCE=3V, IE=7mA
3.0 4.5
GHz
Noise Figure
NF VCE=3V,IC=7mA,f=1GHz
1.2 2.5 dB
CLASSIFICANTION OF hFE
Marking
R23 R24 R25
hFE
40-80
70-140
125-250
TYPICAL CHARACTERISTICS @ Ta=25unless otherwise specified
F042
Rev.A
www.gmesemi.com
2


Part Number 2SC4226
Description NPN Silicon Epitaxial Planar Transistor
Maker GME
Total Page 4 Pages
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