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Sanyo Electric Components Datasheet

2SC4221 Datasheet

NPN Triple Diffused Planar Silicon Transistor

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Ordering number:EN2816B
NPN Triple Diffused Planar Silicon Transistor
2SC4221
500V/3A Switching Regulator Applications
Features
· High breakdown voltage, high reliability.
· Fast switching speed (tf=0.1µs typ).
· Wide ASO.
· Adoption of MBIT process.
· Suitable for sets whose height is restricted.
Package Dimensions
unit:mm
2049C
[2SC4221]
10.2
4.5
1.3
1.2
0.8
0.4
123
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
Conditions
PW300µs, duty cycle10%
Tc=25˚C
2.55
2.55
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-220MF
Ratings
800
500
7
3
6
1
40
150
–55 to +150
Unit
V
V
V
A
A
A
W
˚C
˚C
Electrical Characteristics at Ta = 25˚C
Parameter
Symbol
Conditions
Ratings
min typ
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
ICBO
IEBO
hFE1*
hFE2
VCB=500V, IE=0
VEB=5V, IC=0
VCE=5V, IC=0.3A
VCE=5V, IC=1.5A
15
8
* : The hFE1 of the 2SC4221 is classified as follows. When specifying the hFE1 rank, specify two ranks or more in principle.
15 L 30 20 M 40 30 N 50
max
10
10
50
Unit
µA
µA
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
D1598HA (KT)/N228MO, TS No.2816–1/4
Free Datasheet htt


Sanyo Electric Components Datasheet

2SC4221 Datasheet

NPN Triple Diffused Planar Silicon Transistor

No Preview Available !

Parameter
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Gain-Bandwidth Product
Output Capacitance
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Collector-to-Emitter Sustain Voltage
Turn-ON Time
Storage Time
Fall Time
2SC4221
Symbol
Conditions
VCE(sat)
VBE(sat)
fT
Cob
V(BR)CBO
V(BR)CEO
V(BR)EBO
VCEX(sus)
ton
tstg
tf
IC=1.5A, IB=0.3A
IC=1.5A, IB=0.3A
VCE=10V, IC=0.3A
VCB=10V, f=1MHz
IC=1mA, IE=0
IC=5mA, RBE=
IE=1mA, IC=0
IC=1.5A, IB1=0.6A, L=2mH, IB2=–0.6A, clamped
IC=2A, IB1=0.4A, IB2=–0.8A, RL=100, VCC=200V
IC=2A, IB1=0.4A, IB2=–0.8A, RL=100, VCC=200V
IC=2A, IB1=0.4A, IB2=–0.8A, RL=100, VCC=200V
Ratings
min typ
18
50
800
500
7
500
max
1.0
1.5
0.5
3.0
0.3
Unit
V
V
MHz
pF
V
V
V
V
µs
µs
µs
Switching Time Test Circuit
No.2816–2/4
Free Datasheet http://www.Datasheet4U.com


Part Number 2SC4221
Description NPN Triple Diffused Planar Silicon Transistor
Maker Sanyo Semicon Device
Total Page 4 Pages
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