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  NEC Electronic Components Datasheet  

2SC4225 Datasheet

NPN SILICON EPITAXIAL TRANSISTOR

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DATA SHEET
SILICON TRANSISTOR
2SC4225
MICROWAVE LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
SUPER MINI MOLD
DESCRIPTION
The 2SC4225 is an NPN silicon epitaxial transistor designed for low
noise amplifier at VHF through UHF band.
It has large dynamic range and good current characteristics.
FEATURES
• Low Noise and High Gain
NF = 1.5 dB TYP.
at VCE = 10 V, IC = 5 mA, f = 1 GHz
S21e 2 = 10 dB TYP. at VCE = 10 V, IC = 20 mA, f = 1 GHz
(reference value)
PACKAGE DIMENSIONS
in millimeters
2.1 ± 0.1
1.25 ± 0.1
2
13
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
VCB0
VCE0
VEB0
IC
PT
Tj
Tstg
25
12
3.0
70
160
150
–65 to +150
V
V
V
mA
mW
˚C
˚C
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
Marking
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
Characteristics
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain Bandwidth Product
Output Capacitance
Insertion Power Gain
Noise Figure
Symbol
ICB0
IEB0
hFE
fT
Cob
S21e 2
NF
MIN.
40
7.5
TYP.
80
4
1.2
9.0
1.5
MAX.
1.0
1.0
200
1.8
3.0
Unit
µA
µA
GHz
pF
dB
dB
Test Conditions
VCB = 10 V, IE = 0
VEB = 2 V, IC = 0
VCE = 3 V, IC = 20 mA, pulsed
VCE = 3 V, IC = 20 mA, f = 1 GHz
VCB = 3 V, IE = 0, f = 1 MHz
VCE = 3 V, IC = 20 mA, f = 1 GHz
VCE = 3 V, IC = 5 mA, f = 1GHz
hFE Classifications
Rank
Marking
hFE
R2
R2
40 to 120
R3
R3
100 to 200
Document No. P11192EJ2V0DS00 (2nd edition)
Date Published February 1996 P
Printed in Japan
© 1996


  NEC Electronic Components Datasheet  

2SC4225 Datasheet

NPN SILICON EPITAXIAL TRANSISTOR

No Preview Available !

TYPICAL CHARACTERISTICS (TA = 25 ˚C)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
200
VCE = 10 V
100
50
30
20
10
0.5
12
5 10 20
IC - Collector Current - mA
50 70
GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT
7
VCE = 10 V
5
2
1
0.5
0.2
0.1
0.5
12
5 10 20
IC - Collector Current - mA
50 70
OUTPUT CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
2
f = 1.0 GHz
1
0.5
0.3
0
0.5 1 2
5 10 20 30
VCB - Collector to Base Voltage - V
2SC4225
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
70
50 VCE = 10 V
20
10
5
2
1
0.5
0.5
0.6 0.7 0.8
VBE - Base to Emitter Voltage - V
0.9
INSERTION GAIN vs.
COLLECTOR CURRENT
15
VCE = 10 V
f = 1.0 GHz
10
5
0
0.5 1
2
5 10 20
IC - Collector Current - mA
50 70
NOISE FIGURE vs.
COLLECTOR CURRENT
7
VCE = 10 V
f = 1.2 GHz
6
5
4
3
2
1
0
0.5 1
2
5 10 20
IC - Collector Current - mA
50 70
2


Part Number 2SC4225
Description NPN SILICON EPITAXIAL TRANSISTOR
Maker NEC
Total Page 8 Pages
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