NCE85H35TC mosfet equivalent, n-channel enhancement mode power mosfet.
* VDSS =85V,ID =350A RDS(ON) < 2.4mΩ @ VGS=10V （Typ：1.8 mΩ）
* Good stability and uniformity with high EAS
* Special process technology for high ESD capability.
and a wide variety of other applications.
General Features
* VDSS =85V,ID =350A RDS(ON) < 2.4mΩ @ VGS=10V （Typ：1.8 .
The NCE85H35TC uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in automotive applications and a wide variety of other applications.
General Features
* VDSS =85V,ID =350A RDS(ON) < 2.4m.
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