NCE85H21T mosfet equivalent, nce n-channel enhancement mode power mosfet.
* VDSS =85V,ID =210A RDS(ON) < 4.5mΩ @ VGS=10V
Schematic diagram
* Good stability and uniformity with high EAS
* Special process technology for high ESD cap.
and a wide variety of other applications.
General Features
* VDSS =85V,ID =210A RDS(ON) < 4.5mΩ @ VGS=10V
Schemati.
The NCE85H21T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in automotive applications and a wide variety of other applications.
General Features
* VDSS =85V,ID =210A RDS(ON) < 4.5mΩ.
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