NCE85H21C mosfet equivalent, n-channel enhancement mode power mosfet.
* VDSS =85V,ID =210A RDS(ON) < 4mΩ @ VGS=10V
* Good stability and uniformity with high EAS
* Special process technology for high ESD capability
* High den.
and a wide variety of other applications.
General Features
* VDSS =85V,ID =210A RDS(ON) < 4mΩ @ VGS=10V
* Good .
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