NCE85H15 mosfet equivalent, nce n-channel enhancement mode power mosfet.
* VDS =85V,ID =150A RDS(ON) <4.8mΩ @ VGS=10V
(Typ:3.9mΩ)
Schematic diagram
* High density cell design for ultra low Rdson
* Fully characterized avalanche v.
General Features
* VDS =85V,ID =150A RDS(ON) <4.8mΩ @ VGS=10V
(Typ:3.9mΩ)
Schematic diagram
* High density .
The NCE85H15 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications.
General Features
* VDS =85V,ID =150A RDS(ON) <4.8.
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