NCE5015S mosfet equivalent, n-channel enhancement mode power mosfet.
* VDS = 60V,ID =12A RDS(ON) < 7.6mΩ @ VGS=10V (Typ:5.7mΩ) RDS(ON) < 8.0mΩ @ VGS=4.5V (Typ:6.3mΩ)
* High density cell design for ultra low Rdson
* Fully charac.
General Features
* VDS = 60V,ID =12A RDS(ON) < 7.6mΩ @ VGS=10V (Typ:5.7mΩ) RDS(ON) < 8.0mΩ @ VGS=4.5V (Typ:6.3mΩ)
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The NCE5015S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
* VDS = 60V,ID =12A RDS(ON) < 7.6mΩ @ VGS=10V (Typ:5.7mΩ) RDS(ON) < 8.0.
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