NCE5520Q mosfet equivalent, nce n-channel enhancement mode power mosfet.
* VDS =55V,ID =20A RDS(ON) < 22mΩ @ VGS=10V
(Typ:19mΩ)
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current
A.
Pb Free Product
NCE5520Q
General Features
* VDS =55V,ID =20A RDS(ON) < 22mΩ @ VGS=10V
(Typ:19mΩ)
* High den.
The NCE5520Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
Pb Free Product
NCE5520Q
General Features
* VDS =55V,ID =20A RDS(ON) < 22mΩ @ VGS=10V
.
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