NCE5549 mosfet equivalent, nce n-channel enhancement mode power mosfet.
* VDS =55V,ID =49A RDS(ON) < 15mΩ @ VGS=10V
(Typ:9mΩ)
Schematic diagram
* High density cell design for ultra low Rdson
* Fully characterized Avalanche volt.
GENERAL FEATURES
* VDS =55V,ID =49A RDS(ON) < 15mΩ @ VGS=10V
(Typ:9mΩ)
Schematic diagram
* High density cel.
The NCE5549 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
GENERAL FEATURES
* VDS =55V,ID =49A RDS(ON) < 15mΩ @ VGS=10V
(Typ:9mΩ)
Schematic diagra.
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