NCE4963 mosfet equivalent, p-channel enhancement mode power mosfet.
* VDS = -20V,ID = -7A RDS(ON) < 27mΩ @ VGS=-4.5V RDS(ON) < 39mΩ @ VGS=-2.5V
D1 G1
G2
D2
S1 S2
Schematic diagram
* High power and current handing capability <.
General Features
* VDS = -20V,ID = -7A RDS(ON) < 27mΩ @ VGS=-4.5V RDS(ON) < 39mΩ @ VGS=-2.5V
D1 G1
G2
D2
S1 S2
.
The NCE4963 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications.
General Features
* VDS = -20V,ID =.
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