* VDS =40V,ID =12A RDS(ON) <12mΩ @ VGS=10V (Typ. 8.4 mΩ) RDS(ON) <18mΩ @ VGS=4.5V (Typ. 12.3 mΩ)
* High density cell design for ultra low Rdson
* Fully charac.

General Features
* VDS =40V,ID =12A RDS(ON) <12mΩ @ VGS=10V (Typ. 8.4 mΩ) RDS(ON) <18mΩ @ VGS=4.5V (Typ. 12.3 mΩ) .

The NCE4012S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features
* VDS =40V,ID =12A RDS(ON) <12mΩ @ VGS=10V (Typ. 8.4 mΩ) RDS(ON) <18mΩ .

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