NCE4007S mosfet equivalent, nce p-channel enhancement mode power mosfet.
* VDS =-40V,ID =-6.2A RDS(ON) <25mΩ @ VGS=-10V
* High density cell design for ultra low Rdson
* Fully characterized Avalanche voltage and current
* Excell.
GENERAL FEATURES
* VDS =-40V,ID =-6.2A RDS(ON) <25mΩ @ VGS=-10V
* High density cell design for ultra low Rdson.
The NCE4007S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
GENERAL FEATURES
* VDS =-40V,ID =-6.2A RDS(ON) <25mΩ @ VGS=-10V
* High density cell .
Image gallery
TAGS
Download (Size : 395.86KB)